Publications du groupe Nanomir - 2011

C–INV : Conférences données à l’invitation du comité d’organisation dans un congrès national ou international

E. Tournié, A. Gassenq, L. Cerutti, “The InAs/GaSb/InSb short-period superlattice: an active zone for mid-IR lasers”, SPIE Photonics West, Opto-2011, “Quantum Sensing and Nanophotonic Devices VIII”, 23 – 27 January 2011, San Francisco (USA.), paper 7949-17.

N. Hattasan, L. Cerutti, J.B. Rodriguez, E. Tournié, D. Van Thourout, and G. Roelkens, “Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications”, SPIE Photonics West, Opto-2011, “Quantum Sensing and Nanophotonic Devices VIII”, 23 – 27 January 2011, San Francisco (USA.), paper 7945-58.

 

J.B. Rodriguez, L. Cerutti, J.R. Reboul, and E. Tournié, “Current developments in MBE growth of highly mismatched materials”, European Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 20 – 23 March 2011, Alped’Huez (France).

A.Garnache, A.Laurain, M. Myara, J.P.Perez, L. Cerutti, A. Michon, G. Beaudoin, I. Sagnes, P. Cermak, and . D. Romanini, “Design and properties of high power highly coherent single frequency VECSEL emitting in the near to mid-IR photonic applications”, SPIE Photonics West 2011, “Vertical External Cavity Surface Emitting Lasers“ paper 7919-14, San-Francisco, USA, 22-27 Janvier 2011.

A. Garnache, A. Laurain, M. Myara, J-.P. Perez, L. Cerutti, A. Michon, G. Beaudoin, I. Sagnes, P. Cermak and D. Romanini, “High-power highly-coherent single-frequency compact semiconductor laser for photonic applications”,SPIE Photonics West, Quantum Sensing and Nanophotonic Devices VIII, 7945-7 (2011).

P. Christol, C. Cervera, J.B. Rodriguez, K. Jaworowicz, I. Ribet-Mohamed, “Asymmetric InAs/GaSbsupelattice pin photodiode to improve temperature operation”, Photonic West 2011, San-Francisco, January 2011. Proceedings of the SPIE "Quantum Sensing and Nanophotonic Devices VIII", 7945, 79451H (2011)

P. Christol, Y. Cuminal, N. Cammalleri, A. Dollet, A. Perona, L. Pujol, “GaSb solar cells structures under high solar concentration”, International Conference Nanomeeting 2011, Minsk, Belarus, May 2011.

A. N. Baranov, P. Laffaille, R. Teissier, O. Cathabard, J.C. Moreno, J. Devenson, “Short-wavelength quantum-cascadelasers in theInAs/AlSb material system”, International Symposium on Compound Semiconductors ISCS 2011, Berlin, Germany, May, 2011.

 

ACL : Articles dans revues internationales ou nationales avec comité de lecture répertoriées par l’AERES dans des bases de données internationales

J.R. Reboul, L. Cerutti, J.B. Rodriguez, P. Grech, and E. Tournié, “Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si”, Appl. Phys. Lett. 99, 121113 (2011).

L. Hilico, A. Douillet, J.P. Karr, and E. Tournié, “A high transmission Faraday optical isolator in the 9.2 µm range”, Rev. Sci. Instrum. 82, 096106 (2011).

N. Hattasan, A. Gassenq, L. Cerutti, J.B. Rodriguez, E. Tournié, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit”, IEEE Photon. Technol. Lett. 23, 1760 (2011).

Y. Laaroussi, G.Almuneau, D.Sanchez and L. Cerutti , “Efficient lateral confienment by an oxide aperture in a mid-infrared GaSb based vertical light emitting source”, Journal of Physics D: Applied Physics, 44, 142001, (2011)

K. Jaworowicz, I. Ribet-Mohamed, C. Cervera, J.B. Rodriguez and P. Christol , “Noise Characterization of Midwave Infrared InAs/GaSbSuperlattice pin Photodiode”, Photonic Technology Letter, 23, 242-244 (2011).

C. Cervera, K. Jaworowicz, H. Aït-Kaci, R. Chaghi, J.B. Rodriguez, I. Ribet-Mohamed, P. Christol, “Temperature dependence performances of InAs/GaSbsuperlattice photodiode”, Infrared Physics and Technology, 54, 258-262 (2011).

L. Naehle, S. Belahsene, M.von. Edlinger, M. Fischer, G. Boissier, P. Grech, G. Narcy, A. Vicet, Y. Rouillard, J. Koeth, and L. Worschech, “Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 µm wavelength range around room temperature”, Electron.Lett., Volume 47, Issue 1, p.46–47,2011.

P. Kluczynski, M. Jahjah, L. Nahle, O. Axner, S. Belahsene, M. Fischer, J. Koeth, Y. Rouillard, J. Westberg, A. Vicet and S. Lundqvist, “Detection of acetylene impurities in ethylene and polyethylene manufacturing processes using tunable diode laser spectroscopy in the 3 µm range”, AppliedPhys B, 105 (2) Pages 427-434, 2011.

L. Naehle, C. Zimmermann, S. Belahsene, M. Fischer, G. Boissier, P. Grech, G. Narcy, S. Lundqvist, Y. Rouillard, J. Koeth, M. Kamp and L. Worschech, “Monolithic tunable GaSb-based lasers at 3.3 µm”, Electronics Letters, 47-19, p. 1092 (2011).

K. Ryczko, G. Sęk, M. Motyka, F. Janiak, M. Kubisa, J. Misiewicz, S. Belahsene, G. Boissier and Y. Rouillard, “Effect of Annealing-Induced Interdiffusion on the Electronic Structure of Mid Infrared Emitting GaInAsSb/AlGaInAsSb Quantum Wells”, Japanese Journal of Applied Physics, 50, p. 031202 (2011).

A. N. Imenkov, E. A. Grebenschikova, V. V. Sherstnev, M. A. Sipovskaya, M.I.Larchenkov, D.I. Tarasov, A. N. Baranov, and Yu. P. Yakovlev, “Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nano heterostructures”, Semiconductors 45(3), 355, 2011.

A. Deitel, A. Vasanelli, P. Jouy, D. Barate, J.C. Moreno, R. Teissier, A. N. Baranov, C. Sirtori, “Optical phonon scattering of cavity polaritons in an electroluminescent device”, Phys. Rev. B 83, 081404, 2011.

M.S. Kagan, I.V. Altukhov, A.N. Baranov, N.D. Il’inskaya, S.K. Paprotsky, V.P. Sinis, R. Teissier, A.A. USsikova, “Negative differential conductivity in InAs/AlSb superlattices”, Acta PhysicaPolonica A 119, 210, 2011.

C-ACTI : Communications avec actes dans un congrès international

A.Laurain, L.Cerutti, M. Myara and A. Garnache, “2.7-µm single-frequency TEM00 operation of Sb-based diode-pumped external-cavity VCSEL”, Oral: SPIE Photonics West 2012, paper 8242-13, San-Francisco, USA, 22-26 Janvier 2012. Proceedings of SPIE: Vertical External Cavity Surface Emitting Lasers II, Vol. 8242, Art. Numb. 82420L, 2012

Ribet-Mohamed, K. Jaworowicz, D. Tayibi, C. Cervera, R. Taalat, J.B. Rodriguez, P. Christol, “Noise performance analysis of MWIR InAs/GaSbsuperlattice pin photodiodes”, (oral) DSS SPIE Conference, Orlando, April 2011, Proceedings of the SPIE "Infrared Technology and Applications XXXVII", 8012, 80120Z (2011).

C. Cervera, R. Taalat, P. Christol, J.B. Rodriguez, K. Jaworowicz, I. Ribet-Mohamed, L. Konczewicz, S. Contreras , “Performance analysis of symmetrical and asymmetrical InAs/GaSb superlattice pin photodiode.”, (oral). DSS SPIE Conference, Orlando, April 2011. Proc. of the SPIE "Infrared Technology and Applications XXXVII", 8012, 801213 (2011).

J.F. Guillemoles, A. Le Bris, M. Paire, L. Lombez, S. Laribi, D. Lincot, S. Collin, JL Pelouard, M. Laroche, R. Esteban, J.J. Greffet, G. Boissier, P. Christol, “Hot carrier solar cells: the ultimate photovoltaic conversion in practice”, Photonic West SPIE Conference – SPIE newsroom, San-Francisco, January 2011 (doi: 10.1117/2.1201103.003579).

G. Baili, M. Alouini, L. Morvan, F. Bretenaker, I. Sagnes, A. Garnache and D.l Dolfi, “High finesse external cavity VCSELs: from very low noise lasers to dual frequency lasers”, Proc . SPIE Quantum Sensing and NanophotonicDevices VIII, 7945 (2011), 79450A.

A. Laurain, A. Michon, A. Garnache, G. Beaudoin, C. Roblin, E. Cambril, and I. Sagnes, “Single mode TEM00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate”, Proc. IEEE IPRM 2011 (2011), p.1-4. ISBN: 978-1-4577-1753-6.

A. Laurain, L. Cerutti, M. Myara and A. Garnache, “2.7µm Single-frequency TEM00 operation of Sb-based Diode-Pumped External-Cavity VCSEL”, Proc. EOS Topical Meeting on Lasers ETML'11, (2011), postdeadline paper 4693.

A. Garnache, M. Myara, C. Michel, A. Boucon, “Broadband modeless cw semiconductor laser: design and coherence properties”, Proc. EOS Topical Meeting on Lasers ETML'11, (2011), paper 4558.

Camargo, F.A. ;Sagnes, I. ; Garnache, A. ; Georges, P. ; Lucas-Leclin, G, “Single-frequency optically pumped semiconductor vertical external cavity laser at 852nm for Cs atomic clock”, Proc. IEEE CLEO Europe/IQEC 2011 (Munich, DE), doi 10.1109 /CLEOE. 2011.5942622.

Barrientos, J. ; Camargo, F.A. ; Janicot, S. ; Sagnes, I. ; Garnache, A. ; Baili, G. ; Morvan, L. ; Georges, P. ; Lucas-Leclin, G, “Dual-frequency operation of a vertical external cavity semiconductor laser for coherent population trapping cesium atomic clocks”, Proc. IEEE CLEO Europe/IQEC 2011 (Munich, DE), doi 10.1109/CLEOE.2011.5942630.

A. Laurain, M. Myara, I. Sagnes, A. Garnache, “Intensity and frequency noise in high power highly coherent VeCSELs”, Proc. IEEE CLEO Europe/IQEC 2011 (Munich, DE). doi 10.1109/CLEOE.2011.5942593.

L. Cerutti, J.B. Rodriguez, and E. Tournié “Metamorphic 6.3 Å GaInSb templates grown on GaAs substrates for mid-IR lasers”, European Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 20 – 23 March 2011, Alped’Huez (France).

Y. Laaroussi, L. Cerutti,and G.Almuneau, “Wet thermal oxidation of AlAsSb for lateral confinement in GaSb-based VCSELs”, International Symposium on Compound Semiconductors 2011 (ISCS), 20 24 may 2011, Berlin(Germany).

V. K. Kononenko, E. P. Sachkov, V. M. Stetsik, P. Christol, “Thermal characterization of near-infrared laser quantum-well GaSb-based sources”, Workshop Semiconductor Lasers and Systems, Minsk, Belarus, May 2011.

L. Cerutti, J.B. Rodriguez, J.R. Reboul, and E. Tournié, “Sb-based laser grown on Si substrate operating under cw above room temperature”, 38thInt.Symp.on Compound Semiconductors 2011, (ISCS2011), 22 – 26 May, Berlin (Germany): post-deadline paper.

C. Chevallier, N. Fressengeas, F. Genty, J. Jacquet, Y. Laaroussi, G. Almuneau, D. Sanchez, L. Cerutti, and T. Taliercio, “Optimized GaAs High Contrast Grating Design and Fabrication for Mid-infrared Application at 2.3 μm”, Frontiers in Optic 20011, Paper FWS5, 17-20 October 2011,San-José(USA).

A. Laurain, L. Cerutti, M. Myara, and A. Garnache, “2.7 μm Single-frequency TEM00 operation of Sb-based Diode-Pumped External-Cavity VCSEL”, 2nd EOS Topical Meeting on Lasers (ETML'11), ,26 - 28 September 2011, Capri(Italy): post deadline paper.

T. Taliercio, V. N’Tsame Guilengui, J. Leon, “Nanostructured arrays of doped semiconductors for IR nanophotonics”, Photonics Plamsonics Magneto-optics 2011, IMAGINENANO 11-14 April 2011, bilbao (spain) : oral.

C. Cervera, I. Ribet-Mohamed, R. Taalat, J.P. Perez, P. Christol, J.B. Rodriguez, “Dark current and noise characterization to evaluate the performance of InAs/GaSb SL photodiodesoperating in the mid-wave infrared domain”, II-VI workshop, Chicago, October 2011 : oral.

A. Le Bris, L. Lombez, S. Laribi, J.F. Guillemoles, C. Colin, S. Collin, JL Pelouard, G. Boissier, P. Christol, “A path to realization of high efficiency hot carrier solar cells”, E-MRS spring meeting, Nice, May 2011 : oral.

J.F. Guillemoles, A. Le Bris, L. Lombez, S. Laribi, C. Colin, S. Collin, JL Pelouard, M. Laroche, R. Esteban, J.J. Greffet, G. Boissier, P. Christol, “Hot carrier solar cells: controlling thermalization in ultra thin devices”, 37th IEEE Photovoltaïc Specialist Conference (37'PVSC), Seattle, June 2011 : oral.

S. Belahsene, K. S. Gadedjisso-Tossou, G. Boissier, P. Grech, G. Narcy, and Y. Rouillard, “Room temperature operation of a GaInAsSb/AlGaInAsSb digital alloy laser diode at 3.3 µm”, European Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), Alped’Huez (France), 20 – 23 March 2011.

P. Laffaille, J.C. Moreno, M. Bahriz, A. N. Baranov, R. Teissier, “InAs/AlSb distributed feedback quantum cascade lasers with a first-order top metal-photoresist grating”, ITQW 2011, Badesi, Italy, 11-17 September, 2011.

H. Nguen Van, M. Zaknoune, J.C. Moreno, A. N. Baranov, R. Teissier, “Quantum cascade transistor”, ITQW 2011, Badesi, Italy, 11-17 September, 2011.

M. Bahriz, J.C. Moreno, A. N. Baranov, R. Teissier, “InAs/AlSb quantum cascade active regionforemission in theTHzrange”, ITQW 2011, Badesi, Italy, 11-17 September, 2011.

H. Nguen Van, J.C. Moreno, A. N. Baranov, M. Zaknoune, R. Teissier, “Sub-micron quantum cascadetransistors”, 36th International Conference on Infrared, Millimeter and Terahertz Waves IRMMW-THz, Houston, USA October 2-7, 2011.

 

C-ACTN : Communications avec actes dans un congrès national

C. Cervera, R. Taalat, J.P. Perez, J.B. Rodriguez, P. Christol, I. Ribet-Mohamed, “Performances actuelles et perspectives des photodétecteur à SuperréseauxInAs/GaSb”, (oral) Journée Détecteurs Infrarouges, CD-Rom proceedings, SAGEM-Paris, Mars 2011.

A. Laurain, M. Myara , J-P. Perez, L. Cerutti, G. Beaudoin, A. Michon, I. Sagnes, P. Cermak, D. Romanini et A.Garnache, “Laser à semiconducteur de haute cohérence de forte puissance accordable pour applications photoniques”, Optique Marseille 2011.

R. Taalat, C. Cervera, J.P. Perez, J.B. Rodriguez, P. Christol, I. Ribet-Mohamed, “Photodétecteur à SuperréseauxInAs/GaSb pour une nouvelle génération de détecteur infrarouge”, (poster) Journée Nationale du Réseau Doctoral en Microélectronique (JNRDM), Paris, Mai 2011.

M. Jahjah, S. Moumdji, Y. Rouillard, O. Gauthier-Lafaye, S. Bonnefont and A. Vicet , “QEPAS gas detection with GaSbFabry-Perot lasers and photonic crystals lasers”, FLAIR 2011 – 13-17 September 2011, Murnau (Germany).

T. Taliercio, V. N'Tsame Guilengui, J. Leon, “Métamatériau à bande bande interdite photonique ajustable à base de réseaux de semiconducteurs”, Colloque National Métamatériaux - Orsay (Mars 2011).

A. Cheriet, S. Mechraoui, M. Mebarki, P. Christol, J.P. Perez, H. Aït-Kaci, “Transport électronique dans le système GaAlAsSb(p)/InAsSb(n) : caractérisation et modélisation”, 6ème colloque Physique du solide et ses applications, Oran, Novembre 2011.

 

BRE : Brevets

L. Cerutti, J.B. Rodriguez, E. Tournié "Laser emission system, heterostructure and active zone having coupled quantum sub-wells, and use for 1.55 µm laser emission” WO2011064475 (A1) (2011)

V.V. Sherstnev, A.M. Monakhov, E.A. Grebenschikova, A.N.Baranov, Yu.P. Yakovlev, “Semiconductor frequency-tuned infrared source” Russian Federation patent Nº 2431225 (2011).