RADIAC / Radiation and Components

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The reliability of microelectronic components subject to the effects of radiation has become an industry priority in various areas, including spatial, avionic, and earth-based applications.
The objective of the RADIAC team is to study the fundamental mechanisms that enter into play when components and materials are exposed to radiation, and to propose operational test methodologies and develop prediction tools. Our activities are based on the following topics:
Dosimetry studies are based on using optically-stimulated luminescence properties (OSL) in sulfurous materials (SrS, CaS, MgS...), doped with rare earth materials (Eu, Sm, Ce...). The fabrication of OSL films by serigraphy enables us to create dosage cartographies that illustrate behavior over several decades. OSL materials are also used in designing dosimeter micro-sensors that make it possible to evaluate the Ionizing Dose and Displacement Dose. Target applications include medical radiotherapy, large accelerators, and mobile dosimetry in satellites. This activity's development includes the fabrication of OSL materials in thin layers for ultra-rapid detection applications and technological sensor integration.
Studies on Dose Effects focus on analyzing the failure of mobile components in satellites. The team develops ground methods for evaluating mobile technologies by taking into account the specificities of both the component and related mission. The team is also interested in evaluating the degradation of integrated bipolar technology circuits by carrying out detailed analyses of circuit effects.



Studies on Singular Effects focus on all types of events likely to be observed upon the passing of a particle in a component: Burnout phenomena (SEB) and Latchup (SEL) in power components, logical upsets (SEU) in SRAM memory, the triggering of Latchup (SEL) in inverters, the propagation of transitory pulses (SET) in logical systems. 3D component simulation makes it possible to analyze physical mechanisms within a given component; the distribution of porters generated by the ion and their collection on various electrodes; to offer danger criteria based on parasitic current pulses; and thereby develop error rate prediction tools (SER) and offer solutions for hardening components.
Materials studies focus on physical analysis of crystalline structure modifications in the various materials used in integrated circuits (Silicon, oxide...) following the impact of an ion throughout its trajectory.

RADIAC team members

RADIAtions and Components
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